IRF9Z24 60V 11A P-Channel Power MOSFET

Product Details

• Product: IRF9Z24
• Transistor type: MOSFET
• Control channel: P-Channel
• No of pins: 3
• Package: TO-220
• Mounting type: through hole
• Package contains: 1 x IRF9Z24 60V 11A P-Channel Power MOSFET

   Features

        Dynamic dv/dt capability

Advanced process technology

Fully avalanche rated

Fast switching

Specification

        Drain-source voltage: 55V

Drain-gate voltage: 55V

Gate-source voltage: �20V

Continuous drain current:

At 25?: 17A

At 100?: 12A

        Pulsed drain current: 68A

Maximum avalanche current: 10A

Gate threshold voltage: 2V to 4V

Drain-to-source leakage current: 25�A

Gate-to-source forward leakage: 100nA

Gate-to-source reverse leakage: -100nA

Rise time: 34nS

Fall time: 27nS

Turn-on delay time: 4.9nS

Turn-off delay time: 19nS

Maximum power dissipation: 45W

Operating temperature: -55? to 175?